From
PhysOrg.com:
IBM Research in Zurich has demonstrated a new nanoscale patterning technique that could replace electron beam lithography (EBL). The demonstration carved a 1:5 billion scale three-dimensional model of the Matterhorn, a 4,478 meter high mountain lying on the border between Italy and Switzerland, to show how their technique could be used for a number of applications, such as creating nanoscale lenses on silicon chips for carrying optical circuits at a scale so small that electronic circuits are inefficient.
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